Consider an N-type silicon sample with Nd=10^16 cm-3. The dimensions of the sample can be found in Problem Figure .The carrier lifetime (electrons and holes) is 1us .The mobilities are un=625 cm/Vs and up=200 cm/Vs 1) What is the resistance of the sample (in ohms). 2)The silicon sample is contaminated by metallic impurities which give rise to recombination levels per cubic centimeter. As a result, the carrier lifetime is reduced to 100 ns. These recombination centers are located at the center of the bandgap(Et-Ei) What is the resistance of the sample (in ohms)? 3) The sample is illuminated with light, which gives rise to a uniform external generation Gn=Gp=G=10^22 cm-3s-1 uniformly throughout in the sample. What is the resistance of the sample (in ohms)? 4) The concentration of metallic impurities is now doubled, while the sample remains illuminated. What is the resistance of the sample (in ohms)?
March 18, 2019
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