MOSFET Fuzz Circuit 3 PUBLIC

High-Gain MOSFET Fuzz Circuit 3

High-gain MOSFET fuzz circuit 3. Uses two dual JFET-input op-amp ICs for gain, and two dual depletion-mode MOSFET devices for fuzz. The op-amps can also be overdriven to add solid-state JFET distortion to the fuzz. Note that the two MOSFET devices are configured separately; one with two standard silicon diodes in a symmetric hard-clipping array, but the other with one standard diode in an asymmetric hart-clipping array. Controls Include: Fuzz 1 enable switch, Fuzz 1 Gain, Drive, Fuzz 2 enable switch, Fuzz 2 Depth, Level, Tone, and Volume. Range above 0 dBV is from 36 Hz to 12 kHz, making the circuit suitable for 6/7/8-string guitar or 4/5/6-string bass, with emphasis on the midrange. Maximum gain = +32.9 dBV (Vo/Vi = 44.2) @ 250 Hz with all controls at 50%, or +61.5 dBV (Vo/Vi = 1188) with all controls at 100% except for Tone and Fuzz 2 Depth, which remain 50% each. The Fuzz 2 Depth has little effect on gain, while the Fuzz 1 Gain control has a significant effect on gain and also on range. The Tone control has negligible effect when set > 50% but significant effect when set < 50%. The circuit can be for a stomp-box or rack-mount application. Battery can be replaced by a regulated single-polarity +9V DC power-supply providing >= 30 mA of current. And while the circuit is simulator verified, consider it experimental. Breadboard test before committing to soldered build.